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Channel Modeling and Quantization Design for 3D NAND Flash Memory.

Cheng Wang1, Zhen Mei1,2, Jun Li1

  • 1School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.

Entropy (Basel, Switzerland)
|July 29, 2023
PubMed
Summary
This summary is machine-generated.

Researchers developed new methods to improve the reliability of three-dimensional (3D) NAND flash memory. These techniques optimize read-voltage thresholds, reducing errors and enhancing data storage system performance.

Keywords:
3D flash memoryLDPC codeschannel modelinginformation theoryquantizationread-voltage thresholds

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Area of Science:

  • Electrical Engineering
  • Computer Science
  • Materials Science

Background:

  • Two-dimensional (2D) NAND flash memory faces scaling limitations.
  • Three-dimensional (3D) NAND flash memory offers increased storage density via vertical stacking.
  • 3D NAND architecture introduces novel error sources, impacting system reliability.

Purpose of the Study:

  • To derive the channel probability density function for 3D NAND flash memory, accounting for major error sources.
  • To develop a metric for designing quantization in multi-layer 3D flash memory.
  • To propose methods for optimizing read-voltage thresholds to enhance reliability and performance.

Main Methods:

  • Derivation of the channel probability density function for 3D NAND flash memory.
  • Derivation of mutual information (MI) for multi-layer 3D flash memory.
  • Development of a dynamic programming algorithm for jointly optimizing read-voltage thresholds (MMI).
  • Development of an MI derivative (MID)-based method for hard-decision decoding (HDD) of error correction codes (ECCs).

Main Results:

  • Jointly optimized read-voltage thresholds achieve performance close to layer-specific optimization with reduced read latency.
  • The MID-based MMI quantizer demonstrates near-optimal performance for HDD of ECCs.
  • The derived channel probability density function accurately models 3D NAND error behavior.

Conclusions:

  • The proposed methods effectively address reliability challenges in 3D NAND flash memory.
  • Optimized read-voltage thresholds significantly improve system performance and reduce latency.
  • The MID-based approach offers an efficient solution for quantizer design in 3D NAND systems.