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Updated: Jul 21, 2025
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium
Yannan Yang1, Rong Fan1, Penghao Zhang1
1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
Abstract:
In this work, we demonstrated a low current collapse normally on Al2O3/AlGaN/GaN MIS-HEMT with in situ H-radical surface treatment on AlGaN. The in situ atomic pretreatment was performed in a specially designed chamber prior to the thermal ALD-Al2O3 deposition, which improved the Al2O3/AlGaN interface with Dit of ~2 × 1012 cm-2 eV-1, and thus effectively reduced the current collapse and the dynamic Ron degradation. The devices showed good electrical performance with low Vth hysteresis and peak trans-conductance of 107 mS/mm. Additionally, when the devices operated under 25 °C pulse-mode stress measurement with VDS,Q = 40 V (period of 1 ms, pulse width of 1 μs), the dynamic Ron increase of ~14.1% was achieved.
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