Related Experiment Video
Updated: Jul 21, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching
Ping Li1,2, Jingwei Guo1, Shengdong Hu1
1Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China.
Abstract:
A novel split-gate SiC MOSFET with an embedded MOS-channel diode for enhanced third-quadrant and switching performances is proposed and studied using TCAD simulations in this paper. During the freewheeling period, the MOS-channel diode with a low potential barrier constrains the reverse current flow through it. Therefore, the suggested device not only has a low diode cut-in voltage but also entirely suppresses the intrinsic body diode, which will cause bipolar deterioration. In order to clarify the barrier-lowering effect of the MOS-channel diode, an analytical model is proposed. The calibrated simulation results demonstrate that the diode cut-in voltage of the proposed device is decreased from the conventional voltage of 2.7 V to 1.2 V. In addition, due to the split-gate structure, the gate-to-drain charge (QGD) of the proposed device is 20 nC/cm2, and the reverse-transfer capacitance (CGD) is 14 pF/cm2, which are lower than the QGD of 230 nC/cm2 and the CGD of 105 pF/cm2 for the conventional one. Therefore, a better high-frequency figure-of-merit and lower switching loss are obtained.
More Related Videos
14:16Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
11:44Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
Published on: August 15, 2014
Related Concept Videos
Schottky Barrier Diode
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...