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Cu-Cu Thermocompression Bonding with a Self-Assembled Monolayer as Oxidation Protection for 3D/2.5D System

Maria Lykova1,2, Iuliana Panchenko2,3, Martin Schneider-Ramelow4

  • 1Fraunhofer Institute for Electronic Nanosystems ENAS, 09126 Chemnitz, Germany.

Micromachines
|July 29, 2023
PubMed
Summary

This study introduces a self-assembled monolayer (SAM) passivation method to prevent copper (Cu) oxidation in microelectronics. SAMs significantly reduce copper oxidation and improve direct copper-copper interconnects, enhancing device reliability.

Keywords:
Cu-Cu bondingSAMSAM desorptionself-assembled monolayersthermocompression bonding

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Area of Science:

  • Materials Science
  • Surface Chemistry
  • Microelectronics Engineering

Background:

  • Copper (Cu) interconnects are crucial for microelectronics, enabling smaller and denser devices.
  • Copper's susceptibility to oxidation presents a major challenge for its widespread application.
  • Existing passivation methods face issues like degradation and removal difficulties.

Purpose of the Study:

  • To investigate the effectiveness of self-assembled monolayers (SAMs) for copper passivation.
  • To address challenges related to SAM degradation and removal for Cu-Cu bonding.
  • To enhance the quality and reliability of direct copper-copper interconnects.

Main Methods:

  • Thermocompression (TC) bonding
  • X-ray photoelectron spectroscopy (XPS) for surface analysis
  • Shear strength testing for bond quality
  • Scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) for material characterization

Main Results:

  • SAM-passivated copper showed minimal oxidation (4 at.%) compared to bare copper (27 at.%) after three weeks of cold storage.
  • TC bonding of SAM-passivated samples demonstrated significant improvements in shear strength.
  • Mean shear strength of passivated samples reached 65.5 MPa, with a 43% increase compared to bare copper post-storage.

Conclusions:

  • Self-assembled monolayers effectively inhibit copper oxidation, preserving surface integrity.
  • SAM passivation enhances the performance and reliability of direct copper-copper interconnects.
  • This method offers a viable solution for improving interconnect quality in the microelectronic industry.