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Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and

Timur S Shamirzaev1,2, Victor V Atuchin3,4,5,6,7

  • 1Laboratory of Physics and Technology of Heterostructures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia.

Nanomaterials (Basel, Switzerland)
|July 29, 2023
PubMed

Keywords:
diffusionrecombinationsemiconductor heterostructurevacancy generation

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