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Related Concept Videos

Network Covalent Solids02:18

Network Covalent Solids

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Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
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Updated: Jul 20, 2025

Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
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Scalable High-Mobility Graphene/hBN Heterostructures.

Leonardo Martini1, Vaidotas Mišeikis1,2, David Esteban3

  • 1Center for Nanotechnology Innovation@NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy.

ACS Applied Materials & Interfaces
|July 31, 2023
PubMed
Summary
This summary is machine-generated.

High-quality graphene-hexagonal boron nitride (hBN) heterostructures were achieved using scalable methods. This advancement significantly boosts graphene

Keywords:
CVDcarrier mobilitygraphenehBNscalabilityvan der Waals heterostructures

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Graphene-hexagonal boron nitride (hBN) heterostructures are crucial for advanced graphene applications.
  • Scalable fabrication methods are needed to realize the full potential of these materials.

Purpose of the Study:

  • To demonstrate the fabrication of high-quality graphene-hBN heterostructures using scalable techniques.
  • To evaluate the structural, chemical, and electronic properties of the fabricated heterostructures.
  • To assess the performance and scalability of the developed fabrication approach.

Main Methods:

  • Growth of continuous hexagonal boron nitride (hBN) films using ion beam-assisted physical vapor deposition on SiO2/Si substrates.
  • Growth of single-crystal graphene on copper using chemical vapor deposition.
  • Transfer of graphene onto hBN/SiO2/Si substrates to form heterostructures.
  • Characterization using atomic force microscopy, Raman spectroscopy, and electrical transport measurements.
  • Evaluation of device performance using the transfer length method.

Main Results:

  • Successful fabrication of high-quality graphene-hBN heterostructures via scalable methods.
  • Graphene carrier mobilities exceeding 10,000 cm2/Vs were achieved in ambient conditions, a 30% improvement over graphene on SiO2/Si.
  • Scalability demonstrated by measuring over 100 devices across a centimeter scale, yielding an average carrier mobility of 7500 ± 850 cm2/Vs.

Conclusions:

  • The developed all-scalable approach yields high-quality graphene-hBN heterostructures.
  • These heterostructures exhibit enhanced electronic properties, making them suitable for high-performance graphene-based electronics and optoelectronics.
  • The scalable fabrication method is a significant step towards the commercialization of graphene devices.