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Defect-Free Few-Layer M4 C3 Tx (M = V, Nb, Ta) MXene Nanosheets: Synthesis, Characterization, and Physicochemical
Yanan Huang1, Jibing Shen1,2, Shuai Lin1
1Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, 230031, P. R. China.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|August 2, 2023
Summary
Researchers developed a universal strategy to synthesize defect-free few-layer M4C3Tx (M = V, Nb, Ta) MXenes. This breakthrough enables detailed characterization and future applications of these advanced nanomaterials.
Area of Science:
- Materials Science
- Nanotechnology
- Chemistry
Background:
- Few-layer M4C3Tx (M = V, Nb, Ta) MXenes are crucial for advanced applications.
- Synthesizing defect-free M4C3Tx MXenes is challenging due to etching difficulties and precursor impurities.
Purpose of the Study:
- To develop a universal synthesis strategy for defect-free few-layer M4C3Tx (M = V, Nb, Ta) MXenes.
- To comprehensively characterize the synthesized MXenes and provide guidelines for future research.
Main Methods:
- A universal synthesis strategy involving calcination, selective etching, intercalation, and exfoliation was employed.
- Comprehensive characterizations were performed to confirm structural and chemical properties.
- Free-standing films were fabricated using vacuum filtration.
Main Results:
- Three types of defect-free few-layer M4C3Tx (M = V, Nb, Ta) nanosheets were successfully synthesized.
- Characterizations confirmed large interlayer spacing (1.702-1.955 nm), specific functional groups (-OH, -F, -O), and diverse valence states.
- Synthesized M4C3Tx films exhibited hydrophilia, high thermal stability, and good conductivity.
Conclusions:
- A roadmap for synthesizing defect-free few-layer M4C3Tx MXenes was established.
- This work provides essential guidelines for producing other defect-free few-layer MXenes.
- The findings are expected to accelerate functional explorations of M4C3Tx MXenes.
