Related Experiment Video
Updated: Jul 20, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
A novel method for measuring the charging kinetics of dielectrics under electron irradiation in SEM
E I Rau1, A A Tatarintsev1, E Yu Zykova1
1M.V.Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory, Moscow 119991, Russia.
Abstract:
A novel method is proposed to measure the charging potential of dielectric targets under medium energy electron irradiation in a scanning electron microscope. The method is based on the measurement of backscattered electron signals by standard semiconductor or scintillation detectors. The signal is pre-calibrated by grey scale levels on the SEM screen. The detector signal is made up with backscattered and secondary electrons which are accelerated in the electric field created above the dielectric surface under irradiation.

