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Half-quantized helical hinge currents in axion insulators.

Ming Gong¹, Haiwen Liu², Hua Jiang^3,4

¹International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.

National Science Review

|August 11, 2023

Summary

This summary is machine-generated.

Fractional quantization in axion insulators (AIs) is realized through half-quantized helical hinge currents. These topological currents, originating from surface electron reflection, are robust and experimentally verifiable.

Keywords:

Goos-Hänchen effect axion insulator half-quantization parity anomaly topological magnetoelectric effect

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Area of Science:

Condensed Matter Physics
Topological Materials

Background:

Fractional quantization phenomena are typically observed in correlated electron systems.
Realizing fractional quantization in noncorrelated systems, such as axion insulators, presents a significant challenge.

Purpose of the Study:

To propose and investigate the manifestation of fractional quantization in axion insulators (AIs).
To identify unique fractional boundary excitations in AIs arising from the parity anomaly.

Main Methods:

Theoretical analysis of parity anomaly in axion insulators.
Semiclassical wave packet analysis to understand the origin and robustness of hinge currents.
Proposal of a six-terminal device for experimental verification.

Main Results:

Identification of half-quantized helical hinge currents as a unique fractional boundary excitation in AIs.
Microscopic origin of hinge currents linked to the lateral Goos-Hänchen shift of Dirac electrons.
Demonstration of topological origin and parameter robustness of half-quantized hinge currents.

Conclusions:

Axion insulators provide a platform for realizing fractional quantization through half-quantized helical hinge currents.
The proposed experimental setup offers a feasible method to detect these topological hinge channels.
This work advances the understanding and experimental realization of topological magnetoelectric effects in AIs.