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Spray pyrolysis-derived robust ferroelectric BiFeO3 thin films.

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  • 1Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal-576104, India. bv.rajendra@manipal.edu.

Physical Chemistry Chemical Physics : PCCP
|August 14, 2023
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Summary

Spray pyrolysis enables scalable, low-cost fabrication of high-quality bismuth ferrite thin films. Optimized films show robust ferroelectric properties, paving the way for advanced electronic devices and sensors.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Scalable and cost-effective synthesis of high-quality ferroic films is essential for next-generation electronic devices.
  • Bismuth ferrite (BiFeO3) is a promising multiferroic material with potential applications in sensors and memory devices.

Purpose of the Study:

  • To develop a scalable and low-cost method for fabricating high-quality bismuth ferrite thin films.
  • To investigate the influence of annealing conditions on the structural and ferroelectric properties of bismuth ferrite thin films.
  • To explore the relationship between microstructure and ferroelectric domain behavior.

Main Methods:

  • Solution-based spray pyrolysis was used to deposit bismuth ferrite thin films on glass substrates.
  • X-ray diffraction (XRD) was employed to analyze the crystallographic structure and orientation.
  • Microstructural characterization and ferroelectric domain imaging were performed.

Main Results:

  • Optimized films exhibited polycrystalline nanostructured grains with preferred (110) orientation.
  • A mixed Fe2+/3+ valence state and oxygen vacancies were identified, influencing film properties.
  • Robust nanoscale polarization switching was observed, with domain sizes correlating to nanocrystalline grain dimensions.
  • Surface-energy-related mechanisms were suggested to play a role in domain pattern formation.

Conclusions:

  • Spray pyrolysis is a viable technique for producing high-quality ferroelectric bismuth ferrite thin films.
  • Optimized annealing conditions yield films with desirable structural and ferroelectric characteristics.
  • The findings offer new avenues for developing cost-effective, scalable advanced electronic devices utilizing ferroelectric materials.