Comprehensive Study on Ultra-Wide Band Gap La2O3/ε-Ga2O3 p-n Heterojunction Self-Powered Deep-UV Photodiodes for
Zhaoying Xi1, Zeng Liu1,2, Lili Yang1,2
1Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
Abstract:
Solar-blind UV photodetectors have outstanding reliability and sensitivity in flame detection without interference from other signals and response quickly. Herein, we fabricated a solar-blind UV photodetector based on a La2O3/ε-Ga2O3 p-n heterojunction with a typical type-II band alignment. Benefiting from the photovoltaic effect formed by the space charge region across the junction interface, the photodetector exhibited a self-powered photocurrent of 1.4 nA at zero bias. Besides, this photodetector demonstrated excellent photo-to-dark current ratio of 2.68 × 104 under 254 nm UV light illumination and at a bias of 5 V, and a high specific detectivity of 2.31 × 1011 Jones and large responsivity of 1.67 mA/W were achieved. Importantly, the La2O3/ε-Ga2O3 heterojunction photodetector can rapidly respond to flames in milliseconds without any applied biases. Based on the performances described above, this novel La2O3/ε-Ga2O3 heterojunction is expected to be a candidate for future energy-efficient fire detection.
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