Performance limit of all-wrapped monolayer MoS₂ transistors

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Two-dimensional transition-metal dichalcogenide channels are key for post-silicon electronics.
• All-wrapped transistors offer advanced device architectures.

Purpose of the Study:

• To theoretically survey performance limits of monolayer MoS2 transistors.
• To analyze scattering mechanisms and device indices for miniaturized transistors.

Main Methods:

• Boltzmann transport theory applied to monolayer MoS2 transistors.
• Inclusion of extrinsic charge scattering mechanisms.
• Introduction of a 'dead space' concept to refine phonon scattering calculations.

Main Results:

• Accurate electronic transport behavior described for MoS2 transistors.
• Charge mobility and current density analyzed for sub-1.5 nm nodes.
• On-state current estimated >2 mA μm−1 for <10 nm channel lengths.

Conclusions:

• Extremely miniaturized monolayer-channel transistors offer significant performance benefits.
• These devices are crucial for advancing More-Moore electronics.
• Theoretical insights guide the development of next-generation semiconductor devices.