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Published on: August 15, 2014
A B- and F-enriched buffering interphase enables a high-rate and high-stability SiO/C anode
Zhaoyu Zhang1, Yufei Zhang1, Minghui Ye1
1Guangdong Provincial Key Laboratory of Plant Resources Biorefinery, School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, China. licc@gdut.edu.cn.
Abstract:
A facile, universal surface engineering strategy is proposed to address the volume expansion and slow kinetic issues encountered by SiO/C anodes. A B-/F-enriched buffering interphase is introduced onto SiO/C by thermal treatment of pre-adsorbed lithium salts at 400 °C. The as-prepared anode integrates both high-rate performance and long-term cycling durability.

