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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Electrically function-switchable magnetic domain-wall memory.

Yu Sheng1, Weiyang Wang1,2, Yongcheng Deng1

  • 1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

National Science Review
|September 6, 2023
PubMed
Summary
This summary is machine-generated.

Researchers developed switchable magnetic domain-wall memory that can change from rewritable to read-only. This innovation protects user data by preventing tampering, offering versatile data security solutions.

Keywords:
SOT-MRAMinformation securitymagnetic domain-wallspin orbit torquesspintronics

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Area of Science:

  • Spintronics
  • Materials Science
  • Data Storage

Background:

  • Versatile memory is crucial for protecting user information in the digital age.
  • Bit-level switchable memory, transitioning between rewritable and read-only modes, is needed to prevent data tampering.
  • Existing memory technologies lack this essential switchable security feature.

Purpose of the Study:

  • To demonstrate a novel memory device with bit-level switchable functionality from rewritable to read-only.
  • To provide end-users with enhanced control over data security and prevent unauthorized modification.
  • To explore the potential of domain-wall memory for multifunctional spintronic applications.

Main Methods:

  • Fabrication of a U-shaped domain-wall memory using an asymmetric Pt/Co/Ru/AlOx heterostructure.
  • Utilizing strong Dzyaloshinskii-Moriya interaction for memory functionality.
  • Applying current pulses to switch memory states and wafer-scale integration on Si/SiO2 substrates.

Main Results:

  • Demonstrated the conversion of rewritable memory to a read-only state using current pulses.
  • Successfully fabricated wafer-scale switchable magnetic domain-wall memory arrays.
  • Confirmed bit-level storage in either rewritable or read-only states based on user requirements.

Conclusions:

  • The developed domain-wall memory offers a practical solution for securing personal confidential data.
  • This technology enables multifunctional spintronic devices with adaptable security features.
  • The findings pave the way for advanced data protection and versatile memory applications.