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Updated: Jul 17, 2025
09:06
Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
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Correction: Lone pair driven anisotropy in antimony chalcogenide semiconductors
Xinwei Wang1, Zhenzhu Li1,2, Seán R Kavanagh1,3
1Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, UK. a.walsh@imperial.ac.uk.
Physical Chemistry Chemical Physics : PCCP
|September 6, 2023
Summary
This correction clarifies findings on lone pair driven anisotropy in antimony chalcogenide semiconductors. It ensures accurate understanding of electronic properties in these advanced materials.
Area of Science:
- Materials Science
- Solid-State Physics
- Semiconductor Physics
Context:
- Antimony chalcogenides are emerging semiconductors with unique electronic properties.
- Anisotropy in these materials is crucial for device applications.
- Previous studies have explored the role of lone pairs in their behavior.
Purpose:
- To correct and refine the understanding of lone pair driven anisotropy.
- To ensure the accuracy of reported electronic and optical properties.
- To provide a corrected basis for future research in antimony chalcogenides.
Summary:
- This work provides a correction to the original article concerning lone pair driven anisotropy in antimony chalcogenide semiconductors.
- The correction addresses specific details regarding the electronic structure and anisotropic behavior.
- Ensures the precise interpretation of experimental and theoretical results.
Impact:
- Improves the reliability of data for antimony chalcogenide semiconductors.
- Facilitates more accurate device design and performance prediction.
- Enhances the fundamental understanding of structure-property relationships in these materials.
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