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Updated: Jul 16, 2025
12:20
Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers
Published on: October 5, 2013
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Multilayer Epitaxial Heterostructures with Multi-Component III-V:Fe Magnetic Semiconductors
Alexey V Kudrin1, Valeri P Lesnikov1, Ruslan N Kriukov1
1Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod, Gagarin av. 23/3, 603950 Nizhny Novgorod, Russia.
Nanomaterials (Basel, Switzerland)
|September 9, 2023
Summary
Researchers developed novel magnetic semiconductor structures using pulsed laser sputtering. Increasing antimony content in iron-doped indium arsenide antimonide enhances ferromagnetic properties, primarily through antimony-mediated exchange interactions.
Area of Science:
- Materials Science
- Solid State Physics
- Semiconductor Research
Background:
- III-V semiconductors are crucial for electronic and optoelectronic devices.
- Doping with magnetic elements like iron can introduce novel magnetic properties.
- Understanding exchange interactions is key to designing spintronic materials.
Purpose of the Study:
- To grow and characterize novel three-layer magnetic semiconductor structures.
- To investigate the effect of composition on ferromagnetic properties.
- To elucidate the mechanism of ferromagnetic exchange interaction.
Main Methods:
- Pulsed laser sputtering of InSb, GaSb, InAs, GaAs, and Fe targets.
- Deposition of InAsSb:Fe, InGaSb:Fe, and InSb:Fe layers on GaAs substrates.
- Characterization using Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS).
Main Results:
- Achieved high crystalline quality InAsSb:Fe, InGaSb:Fe, and InSb:Fe layers with up to 24 at.% Fe.
- Observed significant Ga diffusion, forming InGaAsSb:Fe with up to 20 at.% Ga.
- Ferromagnetic properties improved with increasing Sb:As ratio in InAsSb:Fe.
Conclusions:
- The fabricated structures exhibit promising magnetic semiconductor characteristics.
- Ga diffusion leads to the formation of ternary InGaAsSb:Fe compounds.
- Indirect ferromagnetic exchange interaction predominantly occurs via Sb atoms.
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