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Sol-Gel-Processed Y2O3-Al2O3 Mixed Oxide-Based Resistive Random-Access-Memory Devices.

Hae-In Kim1, Taehun Lee1, Yoonjin Cho1

  • 1School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.

Nanomaterials (Basel, Switzerland)
|September 9, 2023
PubMed
Summary

New Y2O3-Al2O3 mixed oxide resistive random-access-memory (RRAM) devices show promising performance. A 50% Y2O3-50% Al2O3 composition offers a high resistance ratio and stable endurance for advanced memory applications.

Keywords:
Al2O3Y2O3high-resistance statelow-resistance stateresistive random-access-memorysol–gel

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Resistive random-access-memory (RRAM) is a promising non-volatile memory technology.
  • Developing stable and efficient RRAM materials is crucial for next-generation electronics.
  • Yttrium oxide (Y2O3) and aluminum oxide (Al2O3) are explored for their dielectric properties.

Purpose of the Study:

  • To fabricate and characterize Y2O3-Al2O3 mixed oxide RRAM devices using sol-gel processing.
  • To investigate the effect of Y2O3 and Al2O3 proportions on device properties.
  • To identify an optimal composition for high-performance RRAM.

Main Methods:

  • Sol-gel processing to create Y2O3-Al2O3 mixed oxide films.
  • Fabrication of RRAM devices on indium tin oxide/glass substrates.
  • Structural, chemical, and electrical property analysis (including I-V characteristics, endurance, and retention).

Main Results:

  • Devices exhibited bipolar RRAM characteristics without a forming step.
  • Increased Al2O3 content reduced crystallinity and increased amorphous phase.
  • A 50% Y2O3-50% Al2O3 device showed the highest High-Resistance-State/Low-Resistance-State (HRS/LRS) ratio (>10^4).
  • This optimal composition demonstrated good endurance (~100 cycles) and retention (>10^4 s).

Conclusions:

  • Sol-gel processed Y2O3-Al2O3 mixed oxides are suitable for RRAM applications.
  • The 50% Y2O3-50% Al2O3 composition offers superior performance, including a high HRS/LRS ratio and stability.
  • These findings contribute to the development of advanced memory devices with improved characteristics.