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"GeSn Rule-23"-The Performance Limit of GeSn Infrared Photodiodes.

Guo-En Chang1, Shui-Qing Yu2, Greg Sun3

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Summary
This summary is machine-generated.

A new "GeSn-rule 23" estimates Germanium-Tin (GeSn) photodetectors performance, including dark current density, responsivity, and detectivity, based on temperature and tin composition for infrared applications.

Keywords:
CMOSGeSn alloysdark currentinfraredresponsivitysilicon photonicssustainability

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Area of Science:

  • Materials Science and Engineering
  • Optoelectronics
  • Semiconductor Device Physics

Background:

  • Group-IV Germanium-Tin (GeSn) photodetectors (PDs) offer a non-toxic alternative for infrared detection, compatible with standard CMOS processing.
  • The performance of GeSn PDs is significantly influenced by tin (Sn) composition and operating temperature, crucial factors for infrared applications.

Purpose of the Study:

  • To develop theoretical models for predicting GeSn photodetector performance.
  • To establish a simple predictive rule, "GeSn-rule 23", for device developers.
  • To provide an indicator for estimating device performance under various conditions.

Main Methods:

  • Development of theoretical models to describe GeSn photodetector dark current density.
  • Analysis of photodetector performance metrics such as responsivity, detectivity, and bandwidth.
  • Correlation of performance parameters with operating temperature, cutoff wavelength, and Sn composition.

Main Results:

  • A predictive rule, "GeSn-rule 23", was established to estimate GeSn PDs' dark current density.
  • The rule relates dark current density to operating temperature, cutoff wavelength, and Sn composition.
  • Photodetector responsivity, detectivity, and bandwidth were found to be highly dependent on operating temperature.

Conclusions:

  • The "GeSn-rule 23" offers a simple and convenient method for estimating GeSn photodetector performance.
  • This rule aids device developers in predicting performance across different operating conditions for practical infrared applications.
  • Understanding the temperature dependence is key for optimizing GeSn photodetector design and application.