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Updated: Jul 16, 2025

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
Published on: July 5, 2019
Tuning of Single Mixed (Helical) Dislocations in Core-Shell van der Waals Nanowires
Peter Sutter1, Raymond R Unocic2, Eli Sutter3
1Department of Electrical & Computer Engineering, University of Nebraska─Lincoln, Lincoln, Nebraska 68588, United States.
Abstract:
Linear defects (dislocations) not only govern the mechanical properties of crystalline solids but they can also produce distinct electronic, thermal, and topological effects. Accessing this functionality requires control over the placement and geometry of single dislocations embedded in a small host volume to maximize emerging effects. Here we identify a synthetic route for rational dislocation placement and tuning in van der Waals nanowires, where the layered crystal limits the possible defect configurations and the nanowire architecture puts single dislocations in close proximity to the entire host volume. While homogeneous layered nanowires host single screw dislocations, the synthesis of radial nanowire heterostructures (here exemplified by GeS-Ge1-SnS monochalcogenide core-shell nanowires) transforms the defect into a mixed (helical) dislocation whose edge/screw ratio is tunable via the core-shell lattice mismatch. The ability to design nanomaterials with control over individual mixed dislocations paves the way for identifying the functional properties of dislocations and harnessing them in technology.
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