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Monolithic integrated all-GaN-based µLED display by selective area regrowth.

Yaying Liu, Zhaojun Liu, Kei May Lau

    Optics Express
    |September 15, 2023
    PubMed
    Summary

    Researchers developed an all-Gallium Nitride (GaN) micro-LED display with integrated High Electron Mobility Transistors (HEMTs). This novel µLED-HEMT technology achieves high performance and displays images, paving the way for advanced display applications.

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    Area of Science:

    • Materials Science
    • Semiconductor Devices
    • Optoelectronics

    Background:

    • Micro-LED (µLED) displays offer superior performance but face integration challenges.
    • Monolithic integration of µLEDs with driving circuitry like High Electron Mobility Transistors (HEMTs) is crucial for compact and efficient displays.
    • Gallium Nitride (GaN) is a promising material for high-brightness and efficient optoelectronic devices.

    Purpose of the Study:

    • To demonstrate an all-GaN-based µLED display with monolithic integration of HEMTs and µLED pixels.
    • To optimize the selective area regrowth method for improved µLED crystal quality and device performance.
    • To evaluate the display's imaging capabilities and overall performance metrics.

    Main Methods:

    • Utilized selective area regrowth to achieve monolithic integration of GaN HEMTs and µLEDs.

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  • Fabricated a 20x20 monochrome µLED-HEMT display with an 80 µm pixel pitch.
  • Applied Tetramethylammonium Hydroxide (TMAH) treatment and Aluminum Oxide (Al2O3) surface passivation to mitigate dry etching damage and non-radiative recombination.

    • Main Results:

    • Achieved a maximum light output power of 36.2 W/cm² and a peak External Quantum Efficiency (EQE) of 3.36% in the µLED-HEMT.
    • Demonstrated successful image display of 'HKUST' using a custom-designed driving circuit board.
    • Observed improved crystal quality in regrown µLEDs, contributing to enhanced optoelectronic performance.

    Conclusions:

    • The all-GaN µLED-HEMT display, fabricated using selective area regrowth, shows significant potential for high-performance display applications.
    • Optimized fabrication processes, including surface treatments, are effective in improving µLED performance by reducing recombination losses.
    • This integrated approach enables the creation of compact, high-resolution displays with excellent imaging capabilities.