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Polycrystalline silicon 2 × 2 Mach-Zehnder interferometer optical switch.

Xinru Xu, Yuexin Yin, Chunlei Sun

|September 15, 2023

Summary

We developed a low-temperature polycrystalline silicon (poly-Si) optical switch for multilayer photonics. This broadband Mach-Zehnder interferometer switch offers low power consumption and loss, paving the way for advanced photonic integrated circuits.

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Area of Science:

Photonics and Optical Engineering
Materials Science
Integrated Circuit Design

Background:

Development of advanced optical switches is crucial for high-performance photonic integrated circuits.
Polycrystalline silicon (poly-Si) offers a promising material for silicon photonics due to its compatibility with CMOS technology.
Existing poly-Si devices often face challenges with thermal stress and carrier plasma absorption (CPA) losses.

Purpose of the Study:

To demonstrate a broadband Mach-Zehnder interferometer optical switch utilizing low-temperature deposited polycrystalline silicon (poly-Si).
To enable the development of multilayer photonics integrated circuits using poly-Si technology.
To address power consumption and loss issues in optical switches.

Main Methods:

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Fabrication of a poly-Si Mach-Zehnder interferometer optical switch using low-temperature deposition (620 °C).

Integration of a π/2 phase shifter and a push-pull configuration to minimize carrier plasma absorption (CPA).

Characterization of the switch's performance, including operating voltages, power consumption, insertion loss, crosstalk, and switching speed.

Main Results:

The poly-Si optical switch operates effectively in both 'Bar' and 'Cross' states with low power consumption (7.98 mW and 9.39 mW, respectively).
Achieved low on-chip loss (5.9 ± 0.4 dB at 1550 nm) and crosstalk (< -20 dB within the C-band).
Demonstrated fast switching times with a 10%-90% rise time of 7.7 µs and a 90%-10% fall time of 3.4 µs.

Conclusions:

The low-temperature deposited poly-Si switch is the first demonstrated on an 8-inch wafer pilot-line, indicating scalability.
The developed switch is suitable for multilayer active photonic devices and photonic-electronic applications.
This technology offers a promising solution for efficient and low-loss optical switching in integrated photonics.