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Updated: Jul 16, 2025

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Untwisting Moiré Physics: Almost Ideal Bands and Fractional Chern Insulators in Periodically Strained Monolayer
Qiang Gao1, Junkai Dong2, Patrick Ledwith2
1Department of Physics, The University of Texas at Austin, Texas 78712, USA.
Abstract:
Moiré systems have emerged in recent years as a rich platform to study strong correlations. Here, we will propose a simple, experimentally feasible setup based on periodically strained graphene that reproduces several key aspects of twisted moiré heterostructures-but without introducing a twist. We consider a monolayer graphene sheet subject to a C_{2}-breaking periodic strain-induced pseudomagnetic field with period L_{M}≫a, along with a scalar potential of the same period. This system has almost ideal flat bands with valley-resolved Chern number ±1, where the deviation from ideal band geometry is analytically controlled and exponentially small in the dimensionless ratio (L_{M}/l_{B})^{2}, where l_{B} is the magnetic length corresponding to the maximum value of the pseudomagnetic field. Moreover, the scalar potential can tune the bandwidth far below the Coulomb scale, making this a very promising platform for strongly interacting topological phases. Using a combination of strong-coupling theory and self-consistent Hartree-Fock, we find quantum anomalous Hall states at integer fillings. At fractional filling, exact diagonaliztion reveals a fractional Chern insulator at parameters in the experimentally feasible range. Overall, we find that this system has larger interaction-induced gaps, smaller quasiparticle dispersion, and enhanced tunability compared to twisted graphene systems, even in their ideal limit.
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