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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Updated: Jul 16, 2025

Developing High Performance GaP/Si Heterojunction Solar Cells

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Published on: November 16, 2018

Solution-Processed Heterojunction Photodiodes Based on WSe₂ Nanosheet Networks.

Shixin Liu¹, Tian Carey¹, Jose Munuera^1,2

¹School of Physics, CRANN & AMBER Research Centres, Trinity College, Dublin 2, Ireland.

Small (Weinheim an Der Bergstrasse, Germany)

|September 21, 2023

Summary

Researchers developed solution-processed heterojunction photodiodes using tungsten selenide (WSe2) nanosheets. These devices exhibit high rectification ratios and self-powered operation, advancing photodetector technology.

Keywords:

2D materials photodetectors solution processed heterojunctions transition metal dichalcogenides

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Area of Science:

Materials Science
Optoelectronics
Nanotechnology

Background:

Solution-processed photodetectors using transition metal dichalcogenide (TMD) nanosheets are common, but photodiodes are less explored due to fabrication challenges.
Existing research rarely integrates common transport layers into TMD nanosheet-based heterojunctions.

Purpose of the Study:

To develop a reliable solution-processing method for fabricating heterojunction photodiodes.
To investigate the performance of WSe2 nanosheet-based heterojunctions with PEDOT:PSS and ZnO transport layers.

Main Methods:

Fabrication of heterojunction diodes using liquid-phase-exfoliated tungsten selenide (WSe2) nanosheets.
Integration of PEDOT:PSS and ZnO as injection/transport layers.
Characterization of device performance in dark and under illumination.

Main Results:

Achieved high rectification ratios of up to ~10^4 at ±1 V in the dark without heavily doped silicon substrates.
Demonstrated dual-mode operation (photoconductor and photodiode) upon illumination.
Observed self-powered behavior at zero bias.

Conclusions:

The developed solution-processing method offers a reliable route for fabricating high-performance WSe2-based heterojunction photodiodes.
These devices show promise for applications in sensitive and self-powered optoelectronic systems.