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Related Concept Videos

Semiconductors01:22

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
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Heterogeneous Integration of Solid-State Quantum Systems with a Foundry Photonics Platform.

Hao-Cheng Weng1, Jorge Monroy-Ruz1, Jonathan C F Matthews1

  • 1Quantum Engineering Technology Laboratories, H. H. Wills Physics Laboratory and Department of Electrical and Electronic Engineering, University of Bristol, Bristol BS8 1UB, United Kingdom.

ACS Photonics
|September 25, 2023
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Summary

We integrated nitrogen-vacancy (NV) centers in nanodiamonds with silicon nitride photonics for scalable quantum computing. This approach enables on-chip control and detection of optically active spins, paving the way for advanced quantum technologies.

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Area of Science:

  • Quantum computing
  • Materials science
  • Nanotechnology

Background:

  • Nitrogen-vacancy (NV) centers in diamond are promising solid-state spins for quantum applications.
  • Scalable integration with photonics is crucial for developing practical quantum computers.

Purpose of the Study:

  • To demonstrate heterogeneous integration of NV centers with silicon nitride photonics.
  • To enable scalable, on-chip control and detection of optically active spins.

Main Methods:

  • Utilized a standard 180 nm CMOS foundry process for silicon nitride photonics.
  • Developed a postprocessing step for precise nanodiamond positioning on waveguides.
  • Employed an array of optical fibers for selective excitation and photoluminescence collection.
  • Performed on-chip Hanbury Brown and Twiss cross-correlation measurements.

Main Results:

  • Successfully integrated NV centers in nanodiamonds with low-fluorescence silicon nitride photonics.
  • Achieved selective excitation and on-chip collection of photoluminescence from an array of six nanodiamond sites.
  • Verified single photon emission using an on-chip Hanbury Brown and Twiss experiment.

Conclusions:

  • This work presents a scalable route for addressing large arrays of optically active spins.
  • Heterogeneous integration of NV centers with CMOS photonics simplifies quantum device fabrication.
  • The demonstrated approach eliminates the need for discrete bulk optical setups.