Vertical Diamond p-n Junction Diode with Step Edge Termination Structure Designed by Simulation
Guangshuo Cai1, Caoyuan Mu2, Jiaosheng Li1
1School of Optoelectronic Engineering, Guangdong Polytechnic Normal University, Guangzhou 510665, China.
Abstract:
In this paper, diamond-based vertical p-n junction diodes with step edge termination are investigated using a Silvaco simulation (Version 5.0.10.R). Compared with the conventional p-n junction diode without termination, the step edge termination shows weak influences on the forward characteristics and helps to suppress the electric field crowding. However, the breakdown voltage of the diode with simple step edge termination is still lower than that of the ideal parallel-plane one. To further enhance the breakdown voltage, we combine a p-n junction-based junction termination extension on the step edge termination. After optimizing the structure parameters of the device, the depletion regions formed by the junction termination extension overlap with that of the p-n junction on the top mesa, resulting in a more uniform electric field distribution and higher device performance.
Related Concept Videos
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Modeling of Diode Reverse Characteristics
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...
Modeling of Diode Forward Characteristics
P-N junction
Schottky Barrier Diode
Diode: Forward bias
The behavior of a diode in forward bias...


