Atomically Thin Amorphous Indium-Oxide Semiconductor Film Developed Using a Solution Process for High-Performance...

Area of Science:

• Materials Science
• Electronics Engineering
• Nanotechnology

Background:

• High-performance oxide transistors are crucial for modern electronic devices like displays and sensors.
• Atomically thin semiconductors are key to advancing transistor technology.

Purpose of the Study:

• To develop high-performance, atomically thin indium oxide (InO) semiconductors for thin-film transistors (TFTs) using a solution process.
• To tune the properties of InO by controlling solution molarity for enhanced device characteristics.

Main Methods:

• Fabrication of atomically thin InO semiconductors via a solution process.
• Tuning of InO bandgap and thickness by controlling solution molarity.
• Characterization of TFT performance, including field-effect mobility and on/off-current ratio.

Main Results:

• Achieved high field-effect mobility (13.95 cm² V⁻¹ s⁻¹) and on/off-current ratio (1.42 × 10¹⁰) with 3.12 nm thick InO.
• Demonstrated that charge transport is dominated by percolation conduction in optimized InO films.
• Exhibited superior gate bias stress stability for both positive and negative biases.

Conclusions:

• Solution-processed, atomically thin InO TFTs offer a viable route to high-performance electronic devices.
• Optimized InO thickness and properties are critical for achieving superior transistor characteristics.
• These findings pave the way for scalable, high-throughput fabrication of advanced transistors.