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SnO2-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing

Muhammad Ismail1, Chandreswar Mahata1, Myounggon Kang2

  • 1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.

Nanomaterials (Basel, Switzerland)
|September 28, 2023
PubMed

Keywords:
Schottky emissionmultilevel resistance statesneuromorphic systemresistive switchingtin oxide

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