Showing results (1-10 of 662) with videos related to

Sort By:
Pageof 67
Nanomaterials (Basel, Switzerland)|September 28, 2023
SnO<sub>2</sub>-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and ComputingMuhammad Ismail, Chandreswar Mahata, Myounggon Kang, et al.
Nanoscale Research Letters|June 10, 2022
Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic SystemChandreswar Mahata, Muhammad Ismail, Myounggon Kang, et al.
Nanoscale Research Letters|June 24, 2022
Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic EngineeringMuhammad Ismail, Chandreswar Mahata, Myounggon Kang, et al.
Nano Convergence|July 10, 2023
Mimicking biological synapses with a-HfSiO<sub>x</sub>-based memristor: implications for artificial intelligence and memory applicationsMuhammad Ismail, Maria Rasheed, Chandreswar Mahata, et al.
Nanomaterials (Basel, Switzerland)|October 23, 2020
Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Based Memristor on ITO ElectrodeChandreswar Mahata, Myounggon Kang, Sungjun Kim
Materials (Basel, Switzerland)|December 23, 2022
Forming-Free Tunable Analog Switching in WO<sub>x</sub>/TaO<sub>x</sub> Heterojunction for Emulating Electronic SynapsesChandreswar Mahata, Juyeong Pyo, Beomki Jeon, et al.
Materials (Basel, Switzerland)|October 14, 2022
Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al<sub>2</sub>O<sub>3</sub> Bilayer StructureChandreswar Mahata, Jongmin Park, Muhammad Ismail, et al.
Nanoscale|November 19, 2024
Dynamic FeO<sub></sub>/FeWO<sub></sub> nanocomposite memristor for neuromorphic and reservoir computingMuhammad Ismail, Maria Rasheed, Yongjin Park, et al.
ACS Applied Materials & Interfaces|July 12, 2021
Tunable Synaptic Characteristics of a Ti/TiO<sub>2</sub>/Si Memory Device for Reservoir ComputingJinwoong Yang, Hyojong Cho, Hojeong Ryu, et al.
The Journal of Chemical Physics|November 14, 2023
Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasmaChandreswar Mahata, Hyojin So, Seyeong Yang, et al.
Pageof 67