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Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

Chandreswar Mahata1, Myounggon Kang2, Sungjun Kim3

  • 1School of Electronics Engineering, Chungbuk National University, Cheongju 28644, Korea.

Nanomaterials (Basel, Switzerland)
|October 23, 2020
PubMed

Keywords:
HfO2/Al2O3/HfO2 tri-layer RRAMmultilevel conductancesynaptic propertiestransparent electrode

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