Coexisting Volatile and Nonvolatile Switching in 3D ALD-IGZO Vertical RRAM for Fully Hardware-Based Wide Reservoir

Seeun Lee1, Jaewon Park2, Nawoon Kim1

  • 1Division of Electronics and Electrical Engineering, Dongguk University, Seoul, Republic of Korea.

Summary

This study introduces a novel indium-gallium-zinc oxide (IGZO) vertical resistive random-access memory (VRRAM) platform for neuromorphic computing. The device enables efficient hardware-based reservoir computing, achieving high accuracy on the MNIST dataset.

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