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Updated: Aug 16, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Forming-Free Tunable Analog Switching in WOx/TaOx Heterojunction for Emulating Electronic Synapses
Chandreswar Mahata1, Juyeong Pyo1, Beomki Jeon1
1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
Abstract:
In this work, the sputtered deposited WOx/TaOx switching layer has been studied for resistive random-access memory (RRAM) devices. Gradual SET and RESET behaviors with reliable device-to-device variability were obtained with DC voltage sweep cycling without an electroforming process. The memristor shows uniform switching characteristics, low switching voltages, and a high RON/ROFF ratio (~102). The transition from short-term plasticity (STP) to long-term potentiation (LTP) can be observed by increasing the pulse amplitude and number. Spike-rate-dependent plasticity (SRDP) and paired-pulse facilitation (PPF) learning processes were successfully emulated by sequential pulse trains. By reducing the pulse interval, the synaptic weight change increases due to the residual oxygen vacancy near the conductive filaments (CFs). This work explores mimicking the biological synaptic behavior and further development for next-generation neuromorphic applications.
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