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Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky
Jyi-Tsong Lin1, Kuan-Pin Lin2, Kai-Ming Cheng2
1Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan, R.O.C.. jtlin@ee.nsysu.edu.tw.
Abstract:
In this paper, we present a new novel simple iTFET with overlapping gate on source-contact (SGO), Drain Schottky Contact, and intrinsic SiGe pocket (Pocket-SGO iTFET). The aim is to achieve steep subthreshold swing (S.S) and high ION current. By optimizing the gate and source-contact overlap, the tunneling efficiency is significantly enhanced, while the ambipolar effect is suppressed. Additionally, using a Schottky contact at the drain/source, instead of ion implantation drain/source, reduces leakage current and thermal budget. Moreover, the tunneling region is replaced by an intrinsic SiGe pocket posing a narrower bandgap, which increases the probability of band-to-band tunneling and enhances the ION current. Our simulations are based on the feasibility of the actual process, thorough Sentaurus TCAD simulations demonstrate that the Pocket-SGO iTFET exhibits an average and minimum subthreshold swing of S.Savg = 16.2 mV/Dec and S.Smin = 4.62 mV/Dec, respectively. At VD = 0.2 V, the ION current is 1.81 [Formula: see text] 10-6 A/μm, and the ION/IOFF ratio is 1.34 [Formula: see text] 109. The Pocket-SGO iTFET design shows great potential for ultra-low-power devices that are required for the Internet of Things (IoT) and AI applications.
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