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FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA design
1Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan, ROC. jtlin@ee.nsysu.edu.tw.
Discover Nano
|September 3, 2024
Summary
We developed a novel Forkshape nanosheet Inductive Tunnel Field-Effect Transistor (FS-iTFET) with a Schottky-inductive source. This advanced transistor design significantly improves subthreshold swing and ON-state current for next-generation electronics.
Area of Science:
- Semiconductor device physics
- Advanced transistor technology
- Novel materials and structures
Background:
- Tunnel Field-Effect Transistors (TFETs) offer potential for low-power electronics due to their steeper subthreshold swing (SS).
- Conventional Nanosheet TFETs (NS-TFETs) face challenges in achieving optimal performance.
- Optimizing device architecture is crucial for enhancing TFET efficiency.
Purpose of the Study:
- To introduce and evaluate a novel Forkshape nanosheet Inductive Tunnel Field-Effect Transistor (FS-iTFET).
- To compare the performance of FS-iTFET against conventional NS-TFET and Nanosheet Line-tunneling TFET (NS-LTFET).
- To investigate the impact of Schottky-inductive source and Trap-Assisted Tunneling on device performance.
Main Methods:
- Device design and simulation using Sentaurus TCAD with calibration.
- Comparative analysis of three TFET structures: NS-TFET, NS-LTFET, and FS-iTFET.
- Evaluation of key performance metrics including subthreshold swing (SS) and ON-state current (ION).
Main Results:
- The Nanosheet Line-tunneling TFET (NS-LTFET) improved average subthreshold swing (SSAVG) by 19.2% over NS-TFET.
- The proposed FS-iTFET demonstrated a further 49% improvement in SSAVG and a superior ION/IOFF ratio.
- FS-iTFET exhibited consistently superior performance across various metrics, even considering Trap-Assisted Tunneling effects.
Conclusions:
- The novel FS-iTFET design, incorporating a Schottky-inductive source and Gate-All-Around structure, significantly enhances TFET performance.
- FS-iTFET offers a promising pathway for advancing low-power tunnel field-effect transistor technology.
- The study highlights the effectiveness of innovative device engineering in overcoming TFET limitations.
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