Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Induced Electric Dipoles01:28

Induced Electric Dipoles

4.2K
A permanent electric dipole orients itself along an external electric field. This rotation can be quantified by defining the potential energy because the external torque does work in rotating it. Then, the potential energy is minimum at the parallel configuration and maximum at the antiparallel configuration. While the former is a stable equilibrium, the latter is an unstable equilibrium.
Since the absolute value of potential energy holds no physical meaning, its zero value can be chosen as per...
4.2K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

265
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
265
Types of Semiconductors01:20

Types of Semiconductors

625
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
625
Schottky Barrier Diode01:27

Schottky Barrier Diode

381
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
381
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

363
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
363
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

364
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
364

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Evolution-guided engineering of an ancient nitrogenase interface enhances enzyme activity and stability.

bioRxiv : the preprint server for biology·2026
Same author

Strain Tuning the Occupation of Candidate Topological Weyl States in W-Doped MoTe<sub>2</sub>.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Tuning the Water Reactivity of LaCoO<sub>3</sub> Surfaces by Subsurface Engineering.

Langmuir : the ACS journal of surfaces and colloids·2026
Same author

4<i>s</i> Molecular Orbitals and Strongly Correlated 3d States in TiO<i><sub>x</sub></i> and VO<i><sub>x</sub></i>.

Journal of the American Chemical Society·2026
Same author

Mechanistic Insights Into Quantum-Cutting in Yb<sup>3+</sup>-Doped CsPbCl<sub>3</sub> Nanocrystals.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Macromolecular crystallography at Elettra: current and future perspectives. Corrigendum.

Journal of synchrotron radiation·2026
Same journal

Interplay between oxygen redox and interfacial stability of Li-rich positive electrodes in sulfide-based all-solid-state batteries.

Nature communications·2026
Same journal

Breaking dependence on melanisation imparts diversity to a dogmatic invasion strategy of phytopathogenic fungi.

Nature communications·2026
Same journal

Hydroxyl-rich nanocavities on perovskite enable nearly barrierless intramolecular hydrogen transfer for nitrate electroreduction to ammonia.

Nature communications·2026
Same journal

Household mobility responses to weather extremes in Kyrgyzstan.

Nature communications·2026
Same journal

Autonomous Motion Vision with Tri-bulk-heterojunctioned Organic Adaptation Transistor.

Nature communications·2026
Same journal

Tissue-adhesive hydrogel optical fiber for peripheral optogenetic neuromodulation.

Nature communications·2026
See all related articles

Related Experiment Video

Updated: Jul 14, 2025

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
09:45

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Published on: December 2, 2013

7.7K

Modulation-doping a correlated electron insulator.

Debasish Mondal1, Smruti Rekha Mahapatra1, Abigail M Derrico2

  • 1Solid State and Structural Chemistry Unit, Indian Institute of Science, Bengaluru, Karnataka, India.

Nature Communications
|October 5, 2023
PubMed
Summary
This summary is machine-generated.

Researchers developed new vanadium dioxide (VO2) thin films to control its metal-to-insulator transition (MIT) without structural changes. This modulation-doping method offers a new way to tune electronic properties in correlated electron materials.

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.5K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.7K

Related Experiment Videos

Last Updated: Jul 14, 2025

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
09:45

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Published on: December 2, 2013

7.7K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.5K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.7K

Area of Science:

  • Condensed matter physics
  • Materials science
  • Oxide electronics

Background:

  • Correlated electron materials (CEMs) exhibit diverse condensed matter phases.
  • Vanadium dioxide (VO2) shows a temperature-driven metal-to-insulator transition (MIT) linked to structural changes.
  • Controlling the MIT in VO2 without altering its structure remains a significant challenge.

Purpose of the Study:

  • To design and synthesize modulation-doped VO2-based heterostructures for filling control.
  • To investigate the electronic and structural properties of these engineered VO2 films.
  • To explore the potential of modulation-doping for controlling phase transitions in CEMs.

Main Methods:

  • Fabrication of modulation-doped VO2 thin film heterostructures.
  • Charge transport measurements to analyze electrical conductivity.
  • Hard X-ray photoelectron spectroscopy (HAXPES) for electronic state analysis.
  • Structural characterization to assess crystal symmetry and lattice integrity.

Main Results:

  • Achieved carrier densities exceeding 5 × 10^21 cm^-3 in the insulating state without inducing structural changes.
  • Demonstrated a continuous decrease in the MIT temperature (T_MIT) with increasing carrier concentration.
  • Observed robustness of the insulating state up to doping levels of ~0.2 e-/vanadium.

Conclusions:

  • Modulation-doping is an effective strategy for electronic control of phase transitions in VO2.
  • This approach allows tuning of the MIT without structural modifications.
  • The findings suggest potential applications in electric-field controlled devices utilizing correlated electron oxides.