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Interference leads to systematic error in atomic absorption (AA) measurements by enhancing or diminishing the analytical signal or the background. These interferences can be grouped into three main categories: spectral interference, chemical interference, and physical interference.
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Atomic fluorescence spectroscopy (AFS) is an analytical technique that involves the electronic transitions of atoms in a flame, furnace, or plasma being excited by electromagnetic (EM) radiation. When these atoms absorb energy, they become excited and subsequently release energy as they return to their original state. This emitted light, or "fluorescence," is observed at a right angle to the incident beam. Both absorption and emission processes transpire at distinct wavelengths, which...
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Stearic Acid as an Atomic Layer Deposition Inhibitor: Spectroscopic Insights from AFM-IR.

Saumya Satyarthy1, Md Hasan Ul Iqbal1, Fairoz Abida2

  • 1Department of Chemistry and Biochemistry, The University of Alabama, Tuscaloosa, AL 35487, USA.

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|October 14, 2023
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Summary

Stearic acid (SA) shows promise as an area-selective atomic layer deposition (AS-ALD) blocking layer. This study reveals SA monolayers effectively inhibit ZnO ALD growth on Co and Cu, crucial for advanced chip manufacturing.

Keywords:
AFM-IRatomic layer depositionatomic-force microscopycarboxylic acidinfrared spectroscopyinhibitorself-assembled monolayers

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Surface Chemistry

Background:

  • Advanced chip manufacturing demands precise material placement on intricate structures.
  • Area-selective atomic layer deposition (AS-ALD) offers a cost-effective, high-precision alternative to traditional patterning.
  • Self-assembled monolayers (SAMs) are explored for AS-ALD, but limited molecule choices and understanding of SAM chemistry hinder progress.

Purpose of the Study:

  • To investigate stearic acid (SA) as a potential ALD-inhibiting SAM for AS-ALD applications.
  • To address limitations in SAM molecule selection and understanding of SAM behavior during metal deposition.
  • To demonstrate the viability of SA in enabling selective ALD nucleation.

Main Methods:

  • Utilized nanoscale infrared spectroscopy to study SA monolayers on Co and Cu substrates.
  • Employed atomic force microscopy-infrared spectroscopy (AFM-IR) for surface-sensitive, spatially resolved analysis.
  • Investigated the inhibition of ZnO ALD growth by SA monolayers.

Main Results:

  • SA monolayers effectively inhibited ZnO ALD growth on Co and Cu substrates, comparable to existing SAMs.
  • AFM-IR analysis revealed that SA SAMs do not desorb or degrade during ALD.
  • Observed changes in substrate coordination modes of SA SAMs upon ALD treatment, impacting growth.

Conclusions:

  • Stearic acid is a viable candidate for ALD-inhibiting SAMs in AS-ALD processes.
  • Understanding the chemical changes in SAMs during ALD is crucial for optimizing AS-ALD.
  • This research provides insights into SA SAM behavior, advancing AS-ALD technology for chip manufacturing.