Related Experiment Video
Updated: Jul 13, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Retraction: Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with
Sung Hyeon Jung1, Ji Sook Yang1, Young Been Kim1
1School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea. chohk@skku.edu.
Abstract:
Retraction of 'Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability' by Sung Hyeon Jung et al., Mater. Horiz., 2022, 9, 1010-1022, https://doi.org/10.1039/D1MH01568K.
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