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Resistive switching modulation by incorporating thermally enhanced layer in HfO2-based memristor

Xing Li1, Zhe Feng1, Jianxun Zou1

  • 1School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, People's Republic of China.

Nanotechnology
|October 18, 2023
PubMed
Abstract

Keywords:
bilayer oxide heterostructuresfinite element simulationsmemristormultilevel resistive switchingthermally enhanced layer

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