Related Experiment Video
Updated: Jul 12, 2025

Metal-Assisted Electrochemical Nanoimprinting of Porous and Solid Silicon Wafers
Published on: February 8, 2022
High Aspect Ratio Nanoscale Pores through BCP-Based Metal Oxide Masks and Advanced Dry Etching
Aislan Esmeraldo Paiva1, Michael S Gerlt2,3, Nino F Läubli4
1AMBER Research Centre/School of Chemistry, Trinity College Dublin, Dublin D02 CP49, Ireland.
Abstract:
The reliable and regular modification of the surface properties of substrates plays a crucial role in material research and the development of functional surfaces. A key aspect of this is the development of the surface pores and topographies. These can confer specific advantages such as high surface area as well as specific functions such as hydrophobic properties. Here, we introduce a combination of nanoscale self-assembled block-copolymer-based metal oxide masks with optimized deep reactive ion etching (DRIE) of silicon to permit the fabrication of porous topographies with aspect ratios of up to 50. Following the evaluation of our procedure and involved parameters using various techniques, such as AFM or SEM, the suitability of our features for applications relying on high light absorption as well as efficient thermal management is explored and discussed in further detail.

