Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS₂.

Area of Science:

• Materials Science
• Condensed Matter Physics
• Semiconductor Device Physics

Background:

• Rhenium disulfide (ReS2) field-effect transistors (FETs) are known for their electrical properties and photoresponse.
• Limited research exists on the temperature-dependent photocurrent in ReS2 FETs.

Purpose of the Study:

• To electrically characterize few-layer ReS2 FETs with Cr-Au contacts across a broad temperature range.
• To investigate the temperature dependence of photocurrent and its underlying mechanisms in ReS2 FETs.

Main Methods:

• Electrical characterization of ReS2 FETs, including transfer and output characteristics, at varying temperatures.
• Time-resolved photocurrent measurements as a function of temperature and incident light power.

Main Results:

• Effective Schottky barrier at the Cr-Au/ReS2 interface was estimated.
• Key device parameters like threshold voltage, carrier concentration, and mobility showed temperature-dependent behavior.
• Photocurrent increased with temperature, exhibiting linear power dependence and longer rise/decay times at higher temperatures.

Conclusions:

• Photocurrent in ReS2 FETs is significantly influenced by temperature.
• The photobolometric effect and light-induced adsorbate desorption are identified as key mechanisms contributing to the observed photocurrent behavior at elevated temperatures and low pressures.