Design of a simple and low-cost solid-state ultra-fast high-voltage switch

Ziwen Zhou1, Yifan Li1, Zhaojun Liu1

  • 1Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, 92 Weijin Road, Nankai District, Tianjin 300072, China.

PubMed
Summary

This study introduces a low-cost, 5000V bipolar solid-state ultra-fast high-voltage switch (UFHVS) for mass spectrometry. The novel design ensures high accuracy ion manipulation with rapid switching times and minimal voltage decay.

Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
370
Design Example: Automobile Ignition System01:14

Design Example: Automobile Ignition System

The automobile's ignition system plays a vital role by ensuring the timely ignition of the fuel-air mixture in each cylinder. This ignition is facilitated by a spark plug, which is composed of two electrodes separated by an air gap. A spark forms across this air gap when a substantial voltage is generated between the electrodes, leading to the ignition of the fuel.
One can generate a large voltage using a car battery of 12 volts with the help of inductors. Inductors are known for opposing...
234
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
487
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
362
Voltage Doubler Circuit01:23

Voltage Doubler Circuit

A voltage doubler circuit integrates two main components: a clamping section and a rectifier section. The clamping section consists of a capacitor (C1) and a diode (D1), whereas the rectifier section is equipped with another diode (D2) and capacitor (C2). This circuit produces an output voltage with twice the amplitude of the sinusoidal input voltage.
609
Switching of BJT01:22

Switching of BJT

Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
431