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Updated: Jul 12, 2025
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Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
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Physics, Structures, and Applications of Fluorite-Structured Ferroelectric Tunnel Junctions
Junghyeon Hwang1, Youngin Goh1, Sanghun Jeon1
1School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea.
Small (Weinheim an Der Bergstrasse, Germany)
|October 20, 2023
Summary
Fluorite-structured ferroelectric tunnel junctions (FTJs) offer advantages over perovskite FTJs for advanced electronics. This review covers their physics, fabrication, applications, and challenges.
Area of Science:
- Materials Science
- Solid State Physics
- Nanotechnology
Background:
- Ferroelectricity in fluorite oxides (HfO2, ZrO2) has renewed interest in ferroelectric tunnel junctions (FTJs).
- Fluorite-structured FTJs offer benefits in thickness scaling, CMOS compatibility, and 3D integration compared to perovskite FTJs.
Purpose of the Study:
- To review recent advancements in fluorite-structure ferroelectric tunnel junction (FTJ) devices.
- To explore the transport mechanisms, applications, and challenges of these novel FTJs.
Main Methods:
- Review of existing literature on fluorite-structure FTJs.
- Comparison of transport mechanisms with perovskite FTJs and other resistive switching devices.
- Discussion of structural approaches, materials, and integration challenges.
Main Results:
- Fluorite-structured FTJs exhibit unique transport mechanisms and offer significant advantages for scaling and integration.
- Key applications include neuromorphic computing, logic-in-memory, and physically unclonable functions.
- Identified challenges in materials and device integration require further research.
Conclusions:
- Fluorite-structured FTJs represent a promising platform for next-generation electronic devices.
- Further optimization and overcoming integration hurdles are crucial for widespread adoption.
- This review provides a comprehensive overview of the field, highlighting future research directions.
Keywords:
Hafniaferroelectric tunnel junctionsfluorite structuresneuromorphic devicesnon-volatile memorytransport mechanismMore Related Videos
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