Showing results (1-10 of 63) with videos related to

Sort By:
Pageof 7
ACS Applied Materials & Interfaces|December 14, 2020
Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias EngineeringYoungin Goh, Junghyeon Hwang, Sanghun Jeon
Small (Weinheim an Der Bergstrasse, Germany)|October 20, 2023
Physics, Structures, and Applications of Fluorite-Structured Ferroelectric Tunnel JunctionsJunghyeon Hwang, Youngin Goh, Sanghun Jeon
ACS Applied Materials & Interfaces|December 20, 2021
Flexible Ferroelectric Hafnia-Based Synaptic Transistor by Focused-Microwave AnnealingHongrae Joh, Minhyun Jung, Junghyeon Hwang, et al.
ACS Applied Materials & Interfaces|December 2, 2021
Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse ArraysYoungin Goh, Junghyeon Hwang, Minki Kim, et al.
Nanotechnology|May 23, 2018
The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2Youngin Goh, Sanghun Jeon
Nano Convergence|December 16, 2024
Enhanced performance of hafnia self-rectifying ferroelectric tunnel junctions at cryogenic temperaturesJunghyeon Hwang, Chaeheon Kim, Jinho Ahn, et al.
ACS Applied Materials & Interfaces|January 4, 2024
Monolithically Integrated Complementary Ferroelectric FET XNOR Synapse for the Binary Neural NetworkJunghyeon Hwang, Hongrae Joh, Chaeheon Kim, et al.
Nanoscale|April 10, 2020
Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrodeYoungin Goh, Sung Hyun Cho, Sang-Hee Ko Park, et al.
ACS Applied Materials & Interfaces|October 7, 2017
Efficient Suppression of Defects and Charge Trapping in High Density In-Sn-Zn-O Thin Film Transistor Prepared using Microwave-Assisted SputterYoungin Goh, Jaehan Ahn, Jeong Rak Lee, et al.
ACS Applied Materials & Interfaces|March 3, 2017
Defects and Charge-Trapping Mechanisms of Double-Active-Layer In-Zn-O and Al-Sn-Zn-In-O Thin-Film TransistorsYoungin Goh, Taeho Kim, Jong-Heon Yang, et al.
Pageof 7