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Updated: Jul 12, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits.
Ankita Ram1, Krishna Maity1, Cédric Marchand2
1Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, 67034 Strasbourg, France.
Reconfigurable ferroelectric field-effect transistors (Re-FeFETs) enable multifunctional, nonvolatile logic-in-memory circuits. These 2D van der Waals devices offer compact, energy-efficient solutions for next-generation computing and machine learning hardware.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Next-generation computing hardware seeks alternatives to traditional von Neumann architecture.
- Ferroelectric engineering of semiconductor doping states offers potential for novel computing paradigms.
- Reconfigurable devices are gaining traction for advanced electronic applications.
Purpose of the Study:
- To demonstrate the suitability of reconfigurable ferroelectric field-effect transistors (Re-FeFETs) for designing nonvolatile, reconfigurable logic-in-memory circuits.
- To explore the multifunctional capabilities of Re-FeFETs by modulating energy landscapes in 2D materials.
- To showcase the potential of Re-FeFETs for energy harvesting and compact logic implementations.
Main Methods:
- Utilized 2D tungsten diselenide (WSe2) homojunctions modulated by ferroelectric copper indium thiophosphate (CuInP2S6) split gates.
- Controlled FeFET operating modes (p, n, ambipolar) by programming gate states.
- Implemented Re-FeFETs in circuits to emulate logic functions (NAND/AND, XNOR) and assess energy harvesting capabilities.
Main Results:
- Achieved switching between p, n, and ambipolar FeFET modes with on-off ratios >10^6 and hysteresis windows up to 10 V.
- Demonstrated tunable homojunction behavior from Ohmic-like to diode with a rectification ratio of 10^4.
- Showcased reconfigurable logic functions (NAND/AND, XNOR) with long retention times (>10^4 s) and significant transistor count reduction (up to 80%) compared to CMOS.
Conclusions:
- Re-FeFETs offer a promising platform for multifunctional, nonvolatile logic-in-memory circuits.
- The devices exhibit potential for energy harvesting due to efficient photogenerated carrier separation in diode mode.
- 2D van der Waals Re-FeFETs are suitable for More-than-Moore and beyond-Moore electronics, particularly for energy-efficient in-memory computing and AI hardware.
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