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Updated: Jul 12, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Interfacial engineering of transition metal dichalcogenide/carbon heterostructures for electrochemical energy
Biao Chen1,2, Simi Sui1,3, Fang He1
1School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Key Laboratory of Advanced Ceramics and Machining Technology (Ministry of Education), Tianjin University, Tianjin, 300350, People's Republic of China. fanghe@tju.edu.cn.
Abstract:
To support the global goal of carbon neutrality, numerous efforts have been devoted to the advancement of electrochemical energy conversion (EEC) and electrochemical energy storage (EES) technologies. For these technologies, transition metal dichalcogenide/carbon (TMDC/C) heterostructures have emerged as promising candidates for both electrode materials and electrocatalysts over the past decade, due to their complementary advantages. It is worth noting that interfacial properties play a crucial role in establishing the overall electrochemical characteristics of TMDC/C heterostructures. However, despite the significant scientific contribution in this area, a systematic understanding of TMDC/C heterostructures' interfacial engineering is currently lacking. This literature review aims to focus on three types of interfacial engineering, namely interfacial orientation engineering, interfacial stacking engineering, and interfacial doping engineering, of TMDC/C heterostructures for their potential applications in EES and EEC devices. To accomplish this goal, a combination of experimental and theoretical approaches was used to allow the analysis and summary of the fundamental electrochemical properties and preparation strategies of TMDC/C heterostructures. Moreover, this review highlights the design and utilization of the interfacial engineering of TMDC/C heterostructures for specific EES and EEC devices. Finally, the challenges and opportunities of using interfacial engineering of TMDC/C heterostructures in practical EES and EEC devices are outlined. We expect that this review will effectively guide readers in their understanding, design, and application of interfacial engineering of TMDC/C heterostructures.
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