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Field-Free Spin-Orbit Torque-Induced Magnetization Switching in the IrMn/CoTb Bilayers with a Spontaneous In-Plane
Ruobai Liu1, Jiarui Chen1, Zhuoyi Li2
1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China.
ACS Applied Materials & Interfaces
|October 24, 2023
Summary
This study demonstrates spin-orbit torque (SOT)-induced field-free magnetization switching in IrMn/CoTb bilayers. The material exhibits multistate switching, showing promise for advanced information storage and neuromorphic computing applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Spintronics
Background:
- Spin-orbit torque (SOT) is a key mechanism for efficient magnetization switching in magnetic materials.
- Ferrimagnetic materials offer potential for next-generation data storage due to their unique magnetic properties.
- Controlling magnetization switching without an external magnetic field is crucial for device miniaturization.
Purpose of the Study:
- To demonstrate SOT-induced field-free magnetization switching in a perpendicularly magnetized CoTb ferrimagnet.
- To investigate the role of in-plane exchange bias (IEB) in enabling this switching.
- To explore the potential of the system for multistate storage and neuromorphic computing.
Main Methods:
- Fabrication of IrMn/CoTb bilayers with controlled interfacial properties.
- Utilizing isothermal crystallization to induce spontaneous in-plane exchange bias (IEB) in the IrMn layer.
- Employing the second harmonic voltage measurement method to quantify SOT effects and spin Hall angles.
Main Results:
- Achieved SOT-induced field-free magnetization switching in the CoTb layer of the IrMn/CoTb bilayer.
- Observed a significant SOT effective field and a large effective spin Hall angle.
- Demonstrated multistate magnetic switching behavior with varying current pulse amplitudes at zero field.
Conclusions:
- The IrMn/CoTb bilayer with spontaneous IEB enables efficient, field-free SOT magnetization switching.
- The observed multistate switching behavior is analogous to synaptic weight updates, suitable for neuromorphic networks.
- This system presents a promising platform for developing advanced multilevel storage and neuromorphic computing devices.
Keywords:
exchange biasferrimagnetismfield-free magnetization switchingneuromorphic computingspin−orbit torqueMore Related Videos
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