Analysis of SiC/Si Heterojunction Band Energy and Interface State Characteristics for SiC/Si VDMOS

SiC/Si and GaN/Si heterojunction technology has been widely used in power semiconductor devices, and SiC/Si VDMOS and GaN/Si VDMOS were proposed in our previous paper. Based on existing research, breakdown point transfer technology (BPT) was used to optimize SiC/Si VDMOS. Simulation results showed that the BV of the SiC/Si heterojunction VDMOS was considerably increased from 259 V to 1144 V, and R decreased from 18.2 mΩ·cm² to 6.03 mΩ·cm² compared with Si VDMOS. In order to analyze the characteristics of the SiC/Si heterojunction structure deeply, the influence of the interface state characteristics of the SiC/Si heterojunction on the electrical parameters of VDMOS was analyzed, including electric field characteristics, blocking characteristics, output characteristics, and transfer characteristics. In addition, the influence of the interface state of the SiC/Si heterojunction on energy band characteristics was analyzed. The results showed that with an increase in the interfacial charge (acceptor) concentration, the p-type trap layer was introduced into the interface of the SiC/Si heterojunction, energy increased slightly, and the barrier height difference at the heterojunction increased, resulting in an increase in BV. At the same time, since the barrier height became higher, electrons did not flow easily, so R increased. On the contrary, when a charge (donor) was introduced at the interface of the SiC/Si heterojunction, the number of electrons in the channel increased, resulting in an increase in the electron current, which is conducive to the flow of electrons, resulting in a decrease in R. The energy band and other characteristics of devices with temperature were simulated at different temperatures. Finally, the effects of SiC/Si heterojunction interface states on interface capacitances and switching performances of VDMOS devices were also discussed.