Optimized Design of a Hexagonal Equal Gap Silicon Drift Detector with Arbitrary Surface Electric Field Spiral

Area of Science:

• Semiconductor Device Physics
• Radiation Detection Technology
• Astrophysical Instrumentation

Background:

• Previous studies investigated silicon drift detector (SDD) structures with constant spiral ring cathode gaps.
• Analytical solutions were used to model detector performance, showing excellent electrical characteristics and homogeneous electric fields.

Purpose of the Study:

• To develop a theoretical model for SDD performance using Taylor expansion for non-integer parameters.
• To simulate and analyze electrical properties of single-sided and double-sided SDDs.
• To optimize the cathode gap size for enhanced detector performance.

Main Methods:

• Utilized Taylor expansion method to model SDD performance with non-integer parameters.
• Employed Sentaurus TCAD tool for accurate simulation of electrical properties.
• Compared single-sided and double-sided SDD designs with varying gap sizes (10, 20, 25 μm).

Main Results:

• Double-sided SDDs exhibit a larger transverse drift electric field, improving spatial resolution and response speed.
• Simulation results indicate a 10 μm equal gap is optimal for double-sided SDD electrical characteristics.
• The study provides a validated model for implementing SDD theoretical approaches with complete technical parameters.

Conclusions:

• The optimized double-sided SDD design with a 10 μm gap offers superior performance.
• These findings are crucial for developing large-area SDDs for advanced applications like pulsar X-ray autonomous navigation.
• The validated theoretical model facilitates the design and implementation of next-generation semiconductor detectors.