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Nano-scale charge trapping memory based on two-dimensional conjugated microporous polymer.

Ayman Rezk1, Md Hasan Raza Ansari2, Kayaramkodath Chandran Ranjeesh3

  • 1Department of Electrical Engineering and Computer Science, Khalifa University, Abu Dhabi, 127788, UAE.

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|November 2, 2023
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Summary

Researchers developed a novel two-dimensional conjugated microporous polymer (2D-CMP) for nanoscale memory. This pyrene and isoindigo (PI) based material demonstrates promising performance for future low-power, high-density electronic devices.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Organic Electronics

Background:

  • Growing demand for high-density, high-performance flexible electronics.
  • Two-dimensional conjugated microporous polymers (2D-CMPs) offer promising optoelectronic properties for advanced devices.
  • Need for novel semiconductor nanostructures for memory applications.

Purpose of the Study:

  • To report a novel donor-acceptor type 2D-CMP based on Pyrene and Isoindigo (PI).
  • To investigate the potential of this PI-based 2D-CMP for nano-scale charge-trapping memory applications.
  • To analyze charge carrier transport and entrapment mechanisms in a fabricated Metal-Insulator-Semiconductor (MIS) device.

Main Methods:

  • Exfoliation of PI polymer into nanoparticles (NPs) approximately 2.5 nm thick.
  • Fabrication of a Metal-Insulator-Semiconductor (MIS) device with PI-NPs embedded in the insulator layer.
  • Characterization using Conductive Atomic Force Microscopy (cAFM) and theoretical analysis.

Main Results:

  • Achieved reproducible on-and-off states with a wide memory window (ΔV) of 1.5 V.
  • Demonstrated low operation voltage (<1 V), good retention (10^4 s), and endurance (10^3 cycles).
  • PI-NPs function as nanoscale floating gates with deep trapping sites for charge carriers.

Conclusions:

  • The novel PI-based 2D-CMP is suitable for nano-scale charge-trapping memory.
  • The developed MIS device exhibits excellent memory characteristics.
  • This 2D-CMP shows significant potential for future low-power, high-density memory applications.