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Surface Enhanced Raman Spectroscopy Detection of Biomolecules Using EBL Fabricated Nanostructured Substrates

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Mitigating challenges in aberration-corrected electron-beam lithography on electron-opaque substrates.

Fernando E Camino¹, Nikhil Tiwale¹, Sooyeon Hwang¹

¹Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, United States of America.

|November 2, 2023

Summary

Aberration-corrected electron-beam lithography (AC-EBL) achieves nanometer resolution on thick substrates. Proximity effects from membranes limit feature size, but substrate thickness has minimal impact on pattern quality for quantum device fabrication.

Keywords:

2D quantum devices aberration correction e-beam lithography top-down device fabrication

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Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

Published on: September 14, 2018

Area of Science:

Materials Science
Nanotechnology
Physics

Background:

Aberration-corrected electron-beam lithography (AC-EBL) demonstrates high resolution on thin membranes.
AC-EBL on thick substrates is crucial for top-down fabrication of quantum devices.

Purpose of the Study:

Investigate AC-EBL performance on thick, electron-opaque substrates.
Address challenges in pre-exposure beam focusing for thick substrates.
Evaluate the impact of substrate thickness on nanometer-scale patterning.

Main Methods:

Measured lithographic point spread function using a 200 keV aberration-corrected scanning transmission electron microscope.
Fabricated positive and negative patterns in poly (methyl methacrylate) (PMMA) on SiO₂/Si substrates.
Printed hole arrays on SiN_X/Si substrates with varying Si thickness using developed focusing methods.

Main Results:

Successfully implemented AC-EBL on thick substrates, overcoming pre-exposure focusing issues.
Achieved 26 nm pitch hole arrays in PMMA on SiN_X/Si.
Proximity effects from 50 nm SiN_X membranes limited resolution to 20 nm pitch.
Substrate thickness showed minimal effect on pattern quality down to the 20 nm pitch limit.

Conclusions:

AC-EBL is viable for nanometer-scale patterning on thick substrates for quantum devices.
Novel resists are needed to mitigate proximity effects for finer features.
Developed methods improve AC-EBL focusing on challenging substrates.