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Related Experiment Video

Updated: Jul 11, 2025

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Thickness-variation-insensitive near-infrared quantum dot LEDs.

Wan-Shan Shen1, Yang Liu1, Luke Grater2

  • 1Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China.

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|November 2, 2023
PubMed
Summary

Colloidal quantum dot (CQD) near-infrared light-emitting diodes (NIR-LEDs) now show stable performance across a wide range of emission layer thicknesses. This breakthrough enhances reproducibility and achieves high external quantum efficiency (EQE) for advanced NIR-LED applications.

Keywords:
ElectroluminescenceLight-emitting diodesNear-infraredQuantum dots

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Nanotechnology

Background:

  • Colloidal quantum dots (CQDs) are promising for near-infrared light-emitting diodes (NIR-LEDs) due to tunable luminescence and high quantum efficiency.
  • Current NIR-LEDs suffer from significant external quantum efficiency (EQE) drops with variations in emission layer thickness (EMLT), limiting reproducibility.

Purpose of the Study:

  • To develop NIR-LEDs with stable EQE performance across a broad range of EMLTs.
  • To overcome the thickness-dependent carrier recombination and current density issues in CQD-based NIR-LEDs.

Main Methods:

  • Encapsulating CQDs within a type-I inorganic shell to boost radiative recombination.
  • Post-treating CQD films with a bifunctional linking agent to balance charge carrier mobilities.
  • Fabricating and characterizing NIR-LEDs with varying EMLTs (40-220 nm).

Main Results:

  • Achieved NIR-LEDs with EQE variations below 15% across an EMLT range of 40-220 nm.
  • Obtained a peak EQE of ~11.5% with an 80% photoluminescence quantum yield.
  • Demonstrated balanced electron and hole mobilities (8.23 × 10⁻³ and 7.0 × 10⁻³ cm² V⁻¹ s⁻¹, respectively).
  • Reported the first EMLT-invariant EQE in CQD NIR-LEDs.

Conclusions:

  • Developed highly efficient and reproducible CQD NIR-LEDs with unprecedented EMLT tolerance.
  • The achieved performance represents a significant advancement for CQD NIR-LED technology, particularly for devices with thicker active layers.